KnowSanctions
Needs review2026-10-29
Database freshnesschecked with issues

2026-10-29 03:28 UTC

The latest check has findings or incomplete steps. Not all checks have been confirmed.

daily check at 03:00 UTC
RU EN
back to search
MR

Microelectronic Research and Development Center Novosibirsk

Sanctioned
Новосибирский Филиал Федерального Государственного Бюджетного Учреждения Науки Института Физики Полупроводников имени А. В. Ржанова СО РАН «Конструкторско-Технологический Институт Прикладной Микроэлектроники»
Type
organization
Subtype
Country
-
Listings
1 · 1 Sanctioning jurisdiction
Export
European Union1 Listings

Export restriction

Sanctions listings1
JurisdictionListMeasuresDateStatus
European Union
EU Regulation 833/2014 Annex IV
Annex IV:microelectronic research and development center novosibirsk
Export restriction
2026-04-24activeSource
Official source conditions

This list includes natural or legal persons, entities or bodies which are military end-users, form part of Russia’s military-industrial complex or which have commercial or other links with or which otherwise support Russia’s defence and security sector. These natural or legal persons, entities or bodies contribute to Russia’s military and technological enhancement or to the development of Russia’s defence and security sector. The list also includes entities in third countries other than Russia. Their inclusion in this list (Annex IV of Regulation (EU) No 833/2014) does not entail any attribution of responsibility for their actions to the jurisdiction in which they are operating.

Source ↗
Legal bases

Source evidence

Values are preserved from their sources. Different versions are shown separately; this does not mean every value is confirmed current.

Names and aliases

  • KTIPMAlias
    en
    EU Regulation 833/2014 Annex IV ↗
    Record provenance
    ID
    member:Annex IV:microelectronic research and development center novosibirsk
    SHA-256
    15fb381c2e57980e60ca6a5fd81f0d3331c85e639c756c876a8ac793ce8b0680
    Snapshot
    f8a93176-6604-440d-a4dc-103aecbbb9b8
    Snapshot SHA-256
    0b64ffba544269245e31c621d83bd16e295d3e58b6e4aa4a64a74e8d61de8fea
    Retrieved
    2026-07-09 21:03 UTC
    Original record (JSON)
  • IFP KTIPM SO RANAlias
    en
    EU Regulation 833/2014 Annex IV ↗
    Record provenance
    ID
    member:Annex IV:microelectronic research and development center novosibirsk
    SHA-256
    15fb381c2e57980e60ca6a5fd81f0d3331c85e639c756c876a8ac793ce8b0680
    Snapshot
    f8a93176-6604-440d-a4dc-103aecbbb9b8
    Snapshot SHA-256
    0b64ffba544269245e31c621d83bd16e295d3e58b6e4aa4a64a74e8d61de8fea
    Retrieved
    2026-07-09 21:03 UTC
    Original record (JSON)
  • Новосибирский Филиал Федерального Государственного Бюджетного Учреждения Науки Института Физики Полупроводников имени А. В. Ржанова СО РАН «Конструкторско-Технологический Институт Прикладной Микроэлектроники»Alias
    ru
    EU Regulation 833/2014 Annex IV ↗
    Record provenance
    ID
    member:Annex IV:microelectronic research and development center novosibirsk
    SHA-256
    15fb381c2e57980e60ca6a5fd81f0d3331c85e639c756c876a8ac793ce8b0680
    Snapshot
    f8a93176-6604-440d-a4dc-103aecbbb9b8
    Snapshot SHA-256
    0b64ffba544269245e31c621d83bd16e295d3e58b6e4aa4a64a74e8d61de8fea
    Retrieved
    2026-07-09 21:03 UTC
    Original record (JSON)
  • Novosibirsk Branch of the Federal State Budgetary Institution of Science of the A.V. Rzhanov Institute of Semiconductor Physics SB RAS “Design and Technology Institute of Applied Microelectronics”Alias
    en
    EU Regulation 833/2014 Annex IV ↗
    Record provenance
    ID
    member:Annex IV:microelectronic research and development center novosibirsk
    SHA-256
    15fb381c2e57980e60ca6a5fd81f0d3331c85e639c756c876a8ac793ce8b0680
    Snapshot
    f8a93176-6604-440d-a4dc-103aecbbb9b8
    Snapshot SHA-256
    0b64ffba544269245e31c621d83bd16e295d3e58b6e4aa4a64a74e8d61de8fea
    Retrieved
    2026-07-09 21:03 UTC
    Original record (JSON)
  • Microelectronic Research and Development Center NovosibirskPrimary name
    en
    EU Regulation 833/2014 Annex IV ↗
    Record provenance
    ID
    member:Annex IV:microelectronic research and development center novosibirsk
    SHA-256
    3c449a071912d72c7c623aa4af793de2ae01fc68b3b087673ad59837e2f39490
    Snapshot
    8728bfdf-89c2-4cd5-ab74-a842ef8951fe
    Snapshot SHA-256
    27bd3a15b1373442b2cfd681b45b293a0679248cb5a1ecc8ec667fdac35b884e
    Retrieved
    2026-07-09 20:07 UTC
    Original record (JSON)