{"raw_record_id":"f5866c0f-d004-4d76-b1dc-4e12cdfc3d4e","external_id":"member:Annex IV:microelectronic research and development center novosibirsk","record_hash":"15fb381c2e57980e60ca6a5fd81f0d3331c85e639c756c876a8ac793ce8b0680","raw_record":{"name":"Microelectronic Research and Development Center Novosibirsk","aliases":["Новосибирский Филиал Федерального Государственного Бюджетного Учреждения Науки Института Физики Полупроводников имени А. В. Ржанова СО РАН «Конструкторско-Технологический Институт Прикладной Микроэлектроники»","KTIPM","IFP KTIPM SO RAN","Novosibirsk Branch of the Federal State Budgetary Institution of Science of the A.V. Rzhanov Institute of Semiconductor Physics SB RAS “Design and Technology Institute of Applied Microelectronics”"],"annex_ref":"Annex IV"},"snapshot_id":"f8a93176-6604-440d-a4dc-103aecbbb9b8","snapshot_sha256":"0b64ffba544269245e31c621d83bd16e295d3e58b6e4aa4a64a74e8d61de8fea","fetched_at":"2026-07-09T21:03:45.616276+00:00","source_name":"EUR-Lex","source_url":"https://eur-lex.europa.eu/","document_url":"https://eur-lex.europa.eu/legal-content/EN/TXT/HTML/?uri=CELEX%3A02014R0833-20260424"}